1/10 june 2004 STD20NF06 n-channel 60v - 0.032 ? - 24a dpak stripfet? ii power mosfet rev.3.0.6 typical r ds (on) = 0.032 ? exceptional dv/dt capability 100% avalanche tested application oriented characterization description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications high switching applications type v dss r ds(on) i d STD20NF06 60 v < 0.040 ? 24 a 1 3 dpak to-252 (suffix ?t4?) internal schematic diagram ordering information absolute maximum ratings ( ?) pulse width limited by safe operating area. (1) i sd 24a, di/dt 100a/s, v dd v (br)dss , t j t jmax (2) starting t j = 25 o c, i d =10 a, v dd = 45v sales type marking package packaging STD20NF06 d20nf06 to-252 tape & reel symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v dgr drain-gate voltage (r gs = 20 k ? ) 60 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25c 24 a i d drain current (continuous) at t c = 100c 17 a i dm ( ?) drain current (pulsed) 96 a p tot total dissipation at t c = 25c 60 w derating factor 0.4 w/c dv/dt (1) peak diode recovery voltage slope 10 v/ns e as (2) single pulse avalanche energy 300 mj t stg storage temperature -55 to 175 c t j operating junction temperature
STD20NF06 2/10 tab.1 thermal data electrical characteristics (t case = 25 c unless otherwise specified) tab.2 off tab.3 on (* ) tab.4 dynamic rthj-case rthj-amb t l thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose (1.6 mm from case, for 10 sec) max max 2.5 100 275 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 24v r ds(on) static drain-source on resistance v gs = 10 v i d = 12 a 0.032 0.040 ? symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 25 v i d = 12 a 15 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v f = 1 mhz v gs = 0 690 170 68 pf pf pf
3/10 STD20NF06 tab.5 switching on tab.6 switching off tab.7 source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ?) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 30 v i d = 10 a r g =4.7 ? v gs = 10 v (resistive load, figure 3) 10 30 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 30 v i d = 20 a v gs = 10 v 23 5 7.5 31 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 30 v i d = 10 a r g =4.7 ?, v gs = 10 v (resistive load, figure 3) 30 8 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 24 96 a a v sd (*) forward on voltage i sd = 24 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 20 a di/dt = 100a/s v dd = 30 v t j = 150c (see test circuit, figure 5) 65 150 4.6 ns nc a electrical characteristics (continued) safe operating area thermal impedance
STD20NF06 4/10 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/10 STD20NF06 normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage temperature . . .
STD20NF06 6/10 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
7/10 STD20NF06 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b2 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l2 0.8 0.031 l4 0.6 1 0.023 0.039 == d l2 l4 1 3 == b e == b2 g 2 a c2 c h a1 detail "a" a2 detail "a" to-252 (dpak) mechanical data 0068772-b
STD20NF06 8/10 *on sales type
9/10 STD20NF06 revision history date revision description of changes friday 11 june 2004 3.0.6 missing in the web
STD20NF06 10/10 i nformation furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subje ct t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are n ot a uthorized for use as critical components in life support devices or systems without express writte n approval of stmicroelectron ics. the st logo is registered trademark of stmicroelectronics all other names are the property of their respective owners. ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco -singapore - spain - sweden - switzerland - united kingdom - united states. www.st.com
|
